Coarse, medium, leh fine SiC particle te siam dan tur chu 5:1:4 a ni tur a ni. Black SiC hi silicon carbide brick siamna atana raw material atan thlan a ni tlangpui a; a chemical composition chu hetiang hi a ni: SiC 98.0%, free C 0.5%, Fe 0.2%, leh free SiO2 0.6%. Bonding method a zirin thil siam dan a inang lo. Bonding method hrang hrang atana kalphung tawi te chu hetiang hi a ni:
(1) Silicon nitride-bonded silicon carbide bricks: SiC particle hring, medium, leh fine atanga siam green body leh silicon powder te tak te chu N2 boruak thianghlim takah 1370℃ah an hal thin. Hei hian -SiC skeleton leh - leh -Si3N4 matrix nei brick a siam chhuak a ni. Residual silicon leh SiO2 tlemte chu matrix-ah hian a awm reng a; heng components-a relative content hi siamtu hrang hrangah a inang lo.
(2) Silicon carbide brick: SiC, silicon powder leh carbon powder te chu ratio bik angin an inhmeh a, an mold a, chutah chuan reducing atmosphere-ah 1400 degree-ah an hal a. A tam zawkah chuan firing hi carbon-a phum brick hmanga tih a ni. Firing lai hian -SiC skeleton leh fine-grained -SiC matrix nei brick siam a ni. -SiC hi firing laiin silicon powder tha tak leh carbon powder tha tak te inrem atanga siam a ni a; he product hian residual silicon leh carbon tlemte a pai bawk.
(3) Silicon oxynitride-bonded silicon carbide bricks: Heng brick atana batch buatsaih hian silicon powder tha tak hman zat chu silicon carbide aiin a tlem zawk a ni.